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INL GROWTH AND PROPERTIESHENRY RL; SWIGGARD EM.1978; J. ELECTRON. MATER.; USA; DA. 1978; VOL. 7; NO 5; PP. 647-657; BIBL. 11 REF.Article

LIQUID PHASE EPITAXIAL GROWTH OF GALLIUM ARSENIDE ON AN ETCHED SUBSTRATE.NORDQUIST PER JR; LESSOFF H; SWIGGARD EM et al.1976; MATER. RES. BULL.; U.S.A.; DA. 1976; VOL. 11; NO 8; PP. 939-945; BIBL. 16 REF.Article

PRECIPITATES IN FE-DOPED INP.LEE RN; NORR MK; HENRY RL et al.1977; MATER. RES. BULL.; U.S.A.; DA. 1977; VOL. 12; NO 6; PP. 651-655; BIBL. 7 REF.Article

NEW EPR DATA AND PHOTOINDUCED CHANGES IN GAAS: CR. REINTERPRETATION OF THE "SECOND-ACCEPTOR" STATE AS CR4+STAUSS GH; KREBS JJ; LEE SH et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 22; NO 7; PP. 3141-3143; BIBL. 15 REF.Article

ELECTRICALLY INDUCED SHIFTS OF THE GAAS NUCLEAR SPIN LEVELSDUMAS KA; SOEST JF; SHER A et al.1979; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1979; VOL. 20; NO 11; PP. 4406-4415; BIBL. 15 REF.Article

EPR DETERMINATION OF THE CONCENTRATION OF CHROMIUM CHARGE STATES IN SEMI-INSULATING GAAS:CRSTAUSS GH; KREBS JJ; LEE SH et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 10; PP. 6251-6252; BIBL. 6 REF.Article

LOW NOISE ION-IMPLANTED INP FET'SSLEGER KJ; DIETRICH HB; BARK ML et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 9; PP. 1031-1034; BIBL. 12 REF.Article

IN SITU IN ETCHING TECHNIQUES FOR L.P.E. INP.WRICK V; SCILLA GJ; EASTMAN LF et al.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 16; PP. 394-395; BIBL. 5 REF.Article

BORON CONTAMINATION AND PRECIPITATION DURING THE GROWTH OF INPOBERSTAR JD; STREETMAN BG; BAKER JE et al.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 54; NO 3; PP. 443-448; BIBL. 20 REF.Article

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